DocumentCode :
867034
Title :
Radiation Effects on MOS Devices: Dosimetry, Annealing, Irradiation Sequence, and Sources
Author :
Stassinopoulos, E.G. ; Brucker, G.J. ; Gunten, O. Van ; Knudson, A.R. ; Jordan, T.M.
Author_Institution :
NASA/Goddard Space Flight Center, Greenbelt, MD
Volume :
30
Issue :
3
fYear :
1983
fDate :
6/1/1983 12:00:00 AM
Firstpage :
1880
Lastpage :
1884
Abstract :
This paper reports on some investigations of dosimetry, annealing, irradiation sequences, and radioactive sources, involved in the determination of radiation effects on MOS devices. Results show that agreement in the experimental and theoretical surface to average doses support the use of thermo-luminescent dosimeters (manganese activated calcium fluoride) in specifying the surface dose delivered to thin gate insulators of MOS devices. Annealing measurements indicate the existence of at least two energy levels, or activation energies, for recovery of soft oxide MOS devices after irradiation by electrons, protons, and gammas. Damage sensitivities of MOS devices were found to be independent of combinations and sequences of radiation type or energies. Comparison of various gamma sources indicated a small dependence of damage sensitivity on the Cobalt facility, but a more significant dependence in the case of the Cesium source. These results were attributed to differences in the spectral content of the several sources.
Keywords :
Annealing; Calcium; Dosimetry; Electrons; Energy measurement; Energy states; Insulation; MOS devices; Manganese; Radiation effects;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1983.4332665
Filename :
4332665
Link To Document :
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