Title :
A time-dependent parameter acquisition system for the characterization of MOS transistors and SONOS memory devices
Author :
Sharma, Umesh ; Booth, Richard V H ; White, Marvin H.
Author_Institution :
Lehigh Univ., Bethlehem, PA, USA
fDate :
2/1/1989 12:00:00 AM
Abstract :
An inexpensive and fully automated test station is described for the dynamic characterization of MOS and SONOS devices. The system incorporates a novel circuit which monitors the extrapolated threshold, transconductance, and subthreshold slope over time; onboard circuitry to place the system into one of several different modes of operation; an IEEE-488 interface to a controlling desktop computer; and a control program which performs several different measurement functions. Nonvolatile memory transistors are evaluated by the use of memory retention, programming, and endurance measurements, while short-channel MOS transistor reliability under DC and AC voltage stress is evaluated by monitoring the degradation in threshold and transconductance over time
Keywords :
automatic test equipment; characteristics measurement; data acquisition; dynamic testing; insulated gate field effect transistors; microcomputer applications; reliability; semiconductor device testing; semiconductor storage; AC voltage stress; DC voltage stress; IEEE-488 interface; MOS transistors; SONOS memory devices; Si-SiO2-Si3N4-SiO2-Si; automated test station; degradation; desktop computer; endurance measurements; extrapolated threshold; memory retention; monitoring; multiple dielectric gate nonvolatile semiconductor memory; programming; reliability; subthreshold slope; threshold; time-dependent parameter acquisition system; transconductance; Automatic control; Automatic testing; Circuit testing; Computer displays; Computer interfaces; Control systems; MOSFETs; SONOS devices; Time measurement; Transconductance;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
