Title :
Characteristics of silicon transistors
Author :
Faulkner, E.A. ; Dawnay, J.C.G.
Author_Institution :
University of Reading, J.J. Thomson Physical Laboratory, Reading, UK
fDate :
10/1/1965 12:00:00 AM
Abstract :
The d.c. and low-frequency a.c. characteristics of a number of silicon transistors have been measured over a collector-current range of 10 ¿A¿1 mA. The variations of d.c. and a.c. current gain, input resistance and mutual conductance with collector current are described by simple equations.
Keywords :
amplifiers; characteristics measurement; silicon; transistor circuits; transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19650204
