Title :
Low-Frequency Noise Characterization of GeOx Passivated Germanium MOSFETs
Author :
Wen Fang ; Simoen, Eddy ; Arimura, Hiroaki ; Mitard, Jerome ; Sioncke, Sonja ; Mertens, Hans ; Mocuta, Anda ; Collaert, Nadine ; Jun Luo ; Chao Zhao ; Voon-Yew Thean, Aaron ; Claeys, Cor
Author_Institution :
Key Lab. of Microelectron. Devices & Integrated Technol., Inst. of Microelectron., Beijing, China
Abstract :
The gate-stack quality of planar MOSFETs fabricated in Ge-on-Si substrates and passivated by a GeOx interfacial layer is evaluated by low-frequency noise analysis. It is shown that for both n- and p-channel transistors predominantly 1/fγ noise (γ~1) has been observed, which originates from number and correlated mobility fluctuations. The oxide trap density and mobility scattering coefficient derived from the input-referred voltage noise power spectral density are demonstrated to be significantly higher for nMOSFETs than for pMOSFETs with the same gate-stack, which explains the low electron mobility.
Keywords :
1/f noise; MOSFET; electron mobility; germanium; germanium compounds; semiconductor device noise; silicon; 1/f noise; Ge-on-Si substrate; GeOx; electron mobility; gate-stack quality; interfacial layer; low-frequency noise characterization; mobility fluctuation; mobility scattering coefficient; n-channel transistor; nMOSFET; oxide trap density; p-channel transistor; pMOSFET; passivated germanium MOSFET; planar MOSFET; voltage noise power spectral density; Aluminum oxide; Hafnium compounds; Logic gates; Low-frequency noise; MOSFET; Scattering; 1/ $f$ noise; 1/f noise; Ge MOSFETs; Ge MOSFETs.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2430367
