• DocumentCode
    867422
  • Title

    Turnover phenomenon of N+N N+plate contact silicon device and second breakdown in transistors

  • Author

    Agatsuma, T. ; Kohisa, T. ; Sugiyama, Akihiko

  • Author_Institution
    Musashi Works, Hitachi, Ltd., Tokyo, Japan
  • Volume
    53
  • Issue
    1
  • fYear
    1965
  • Firstpage
    95
  • Lastpage
    95
  • Keywords
    Conductivity; Delay effects; Electric breakdown; Electric resistance; P-n junctions; Silicon devices; Temperature dependence; Temperature sensors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1965.3545
  • Filename
    1445475
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=867422