Title :
Tunneling-assisted radiative recombination in GaAs-diffused junctions
Author :
Ripper, J.E. ; Leite, R.C.C.
Author_Institution :
Bell Telephone Labs., Inc. Murray Hill, N.J.
Keywords :
Charge carrier processes; Current density; Diodes; Impurities; Neodymium; P-n junctions; Radiative recombination; Spontaneous emission; Tunneling; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1965.3579
