Title :
Backgate Modulation Technique for Higher Efficiency Envelope Tracking
Author :
Ghajar, M.R. ; Wilk, Seth J. ; Lepkowski, William ; Bakkaloglu, Bertan ; Thornton, Trevor J.
Author_Institution :
Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
A novel backgate modulation technique alleviating limitations associated with supply-regulated polar transmitters is proposed. The backgate of a partially depleted silicon-on-insulator metal-semiconductor field-effect transistor with a breakdown voltage of 15 V is used to modulate the gain and output power of an RF power amplifier (PA). The high-impedance backgate provides high-efficiency and wide-dynamic-range modulation of PA gain. Measured results at 1.8 GHz demonstrate 16% power-added efficiency improvement at 6-dB backed-off output power, compared with the same RF PA without backgate modulation.
Keywords :
modulation; power amplifiers; radio transmitters; radiofrequency amplifiers; semiconductor device breakdown; silicon-on-insulator; RF power amplifier; backgate modulation technique; breakdown voltage; frequency 1.8 GHz; high-impedance backgate; higher efficiency envelope tracking; metal-semiconductor field-effect transistor; power-added efficiency; silicon-on-insulator; supply-regulated polar transmitters; voltage 15 V; Logic gates; MESFETs; Modulation; Radio frequency; Threshold voltage; Transmitters; Voltage measurement; Backgate bias; envelope tracking; silicon-on-insulator (SOI) MESFET;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2013.2247616
