Development of a New Interposer Including Embedded Thin Film Passive Elements

Author

Mori, Toshiaki ; Yamaguchi, Masataka ; Kuramochi, Satoru ; Fukuoka, Yoshitaka

Author_Institution

Res. & Dev. Center, Dai Nippon Printing Comapny Ltd., Chiba

Volume

32

Issue

2

fYear

2009

fDate

5/1/2009 12:00:00 AM

Firstpage

503

Lastpage

508

Abstract

This paper reports the development of thin film passive elements embedded within the interlayer of a silicon interposer. Thin film resistors were developed using a seed layer formed by the sputter semi-additive method. Inductor coils were designed as spiral coils, using Benzocyclobutene as the dielectric interlayer, and thin film metal-insulator-metal capacitors were formed using an anodizing tantalum oxide thin film as the dielectric layer and tantalum conductor films as capacitor electrodes. In this study, the fabrication process and the high-frequency properties of these passive elements are investigated.

Keywords

anodisation; coils; low-pass filters; passive networks; silicon; thin film resistors; anodic oxidation; benzocyclobutene; dielectric interlayer; embedded thin film passive elements; inductor coils; low-pass filter; silicon interposer; spiral coils; sputter semi-additive method; thin film metal-insulator-metal capacitors; thin film resistors; Anodic oxidation; high-frequency characteristic; low-pass filter; passive circuit; thin film embedded passive elements;

fLanguage

English

Journal_Title

Advanced Packaging, IEEE Transactions on

Publisher

ieee

ISSN

1521-3323

Type

jour

DOI

10.1109/TADVP.2009.2014388

Filename

4926136