A quasi-planar FET amplifier in integrated finline and microstrip technique

Author

Ruxton, James ; Hoefer, Wolfgang J R

Author_Institution

Millennium Microwave Corp., Ottawa, Ont., Canada

Volume

37

Issue

2

fYear

1989

fDate

2/1/1989 12:00:00 AM

Firstpage

429

Lastpage

432

Abstract

The design and performance of a single-stage 20-GHz GaAs FET amplifier in a quasi-planar technology are described. The component includes a compact, wideband transition between the finline input and output ports and the microstrip impedance-matching networks for the transistor. By virtue of a novel bias network which includes a microstrip bandstop filter and a 50-Ω resistor, this transition provides unconditional stability even at frequencies below cutoff of the finline ports. The overall amplifier has a gain of 6 dB at 20 GHz, and a 3-dB bandwidth of 17%

Keywords

III-V semiconductors; fin lines; microwave amplifiers; microwave integrated circuits; strip lines; 20 GHz; 6 dB; GaAs; bias network; cutoff; finline input; integrated finline; microstrip bandstop filter; microstrip impedance-matching networks; microstrip technique; output ports; quasi-planar FET amplifier; unconditional stability; wideband transition; Broadband amplifiers; FETs; Finline; Gallium arsenide; Impedance; Microstrip components; Microstrip filters; Resistors; Stability; Wideband;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.20072

Filename

20072