Title :
Reprogrammable logic array using M-R elements
Author :
Ranmuthu, I.W. ; Ranmuthu, K.T.M. ; Pohm, A.V. ; Comstock, C.S. ; Hassoun, M. ; Eray, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Iowa State Univ., Ames, IA, USA
fDate :
9/1/1990 12:00:00 AM
Abstract :
A reprogrammable logic array has been designed with features such as rapid infinite reprogrammability with a single power supply, nonvolatile configuration storage, and radiation hardness using magnetoresistive (MR) memories. A prototype layout was made for simulation and analysis. The results indicated that all the above features could be achieved along with an approximately 20-ns delay time in the logic array structure using 2-μm CMOS. The sense amplifier reliably detected simulated stored bits subjected to all errors and offsets arising from temperature and manufacturing inconsistencies. It was also discovered that the MR memory consumed only 10-15% of the die area
Keywords :
CMOS integrated circuits; integrated logic circuits; logic arrays; magnetic film stores; magnetoresistance; random-access storage; 2 micron; 20 ns; CMOS; RAM; delay time; magnetoresistive memories; nonvolatile configuration storage; prototype layout; radiation hardness; rapid infinite reprogrammability; reprogrammable logic array; sense amplifier; simulation; Analytical models; CMOS logic circuits; Delay effects; Logic arrays; Logic design; Magnetic analysis; Magnetoresistance; Nonvolatile memory; Power supplies; Virtual prototyping;
Journal_Title :
Magnetics, IEEE Transactions on
