Reprogrammable logic array using M-R elements

Author

Ranmuthu, I.W. ; Ranmuthu, K.T.M. ; Pohm, A.V. ; Comstock, C.S. ; Hassoun, M. ; Eray, M.

Author_Institution

Dept. of Electr. & Comput. Eng., Iowa State Univ., Ames, IA, USA

Volume

26

Issue

5

fYear

1990

fDate

9/1/1990 12:00:00 AM

Firstpage

2828

Lastpage

2830

Abstract

A reprogrammable logic array has been designed with features such as rapid infinite reprogrammability with a single power supply, nonvolatile configuration storage, and radiation hardness using magnetoresistive (MR) memories. A prototype layout was made for simulation and analysis. The results indicated that all the above features could be achieved along with an approximately 20-ns delay time in the logic array structure using 2-μm CMOS. The sense amplifier reliably detected simulated stored bits subjected to all errors and offsets arising from temperature and manufacturing inconsistencies. It was also discovered that the MR memory consumed only 10-15% of the die area

Keywords

CMOS integrated circuits; integrated logic circuits; logic arrays; magnetic film stores; magnetoresistance; random-access storage; 2 micron; 20 ns; CMOS; RAM; delay time; magnetoresistive memories; nonvolatile configuration storage; prototype layout; radiation hardness; rapid infinite reprogrammability; reprogrammable logic array; sense amplifier; simulation; Analytical models; CMOS logic circuits; Delay effects; Logic arrays; Logic design; Magnetic analysis; Magnetoresistance; Nonvolatile memory; Power supplies; Virtual prototyping;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.104890

Filename

104890