DocumentCode :
867975
Title :
On the study of fine structure in tunnel junctions
Author :
Yang, Albert C. ; Vickers, V.E.
Volume :
53
Issue :
2
fYear :
1965
Firstpage :
175
Lastpage :
175
Keywords :
Absorption; Electron emission; Germanium; Helium; P-n junctions; Phonons; Semiconductor diodes; Temperature; Tunneling; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1965.3600
Filename :
1445530
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=867975
