DocumentCode
868040
Title
Independent-Double-Gate FinFET SRAM for Leakage Current Reduction
Author
Endo, Kazuhiko ; O´Uchi, Shin´Ichi ; Ishikawa, Yuki ; Liu, Yongxun ; Matsukawa, Takashi ; Sakamoto, Kunihiro ; Masahara, Meishoku ; Tsukada, Junichi ; Ishii, Kenichi ; Yamauchi, Hiromi ; Suzuki, Eiichi
Author_Institution
Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba
Volume
30
Issue
7
fYear
2009
fDate
7/1/2009 12:00:00 AM
Firstpage
757
Lastpage
759
Abstract
An independent-double-gate (IDG) fin-type MOSFET (FinFET) SRAM has been successfully fabricated with considerable leakage current reduction. The new SRAM consists of IDG-FinFETs which have flexible V th controllability. The IDG-FinFET with a TiN metal gate is fabricated by a newly developed gate-separation etching process. By appropriately controlling the V th of the IDG-FinFET, we have successfully demonstrated the reduction of the leakage current and power consumption of the SRAM circuitry.
Keywords
MOSFET; SRAM chips; etching; leakage currents; IDG-FinFET; fin-type MOSFET; gate-separation etching process; independent-double-gate FinFET SRAM; leakage current reduction; Fin-type MOSFET (FinFET); SRAM; independent double gate (IDG); leakage current;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2009.2021075
Filename
4926158
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