p-Channel Ge MOSFET by Selectively Heteroepitaxially Grown Ge on Si

We successfully demonstrate Ge pMOSFET integrated on Si. In this process, Ge is grown selectively on Si on patterned SiO₂ by heteroepitaxy, and pMOSFET is fabricated with gate dielectric stack consisting of thin GeO₂ and Al₂O₃ and Al metal gate electrode. Fabricated devices show ~80% enhancement over the Si universal hole mobility. These results are promising toward monolithically integrating Ge MOSFETs with Si CMOS VLSI platform.