Title :
Study of Random-Dopant-Fluctuation (RDF) Effects for the Trigate Bulk MOSFET
Author :
Shin, Changhwan ; Sun, Xin ; Liu, Tsu-Jae King
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA
fDate :
7/1/2009 12:00:00 AM
Abstract :
A study of random-dopant-fluctuation (RDF) effects on the trigate bulk MOSFET versus the planar bulk MOSFET is performed via atomistic 3D device simulation for devices with a 20 nm gate length. For identical nominal body and source/drain doping profiles and layout width, the trigate bulk MOSFET shows less threshold voltage (Vth) lowering and variation. RDF effects are found to be caused primarily by body RDF. The trigate bulk MOSFET offers a new method of VTH adjustment, via tuning of the retrograde body doping depth, to mitigate tradeoffs in VTH variation and short-channel effect control.
Keywords :
MOSFET; doping profiles; fluctuations; semiconductor device models; semiconductor doping; RDF effect; atomistic 3D device simulation; planar bulk MOSFET; random-dopant-fluctuation; retrograde body doping depth; short-channel effect control; size 20 nm; source-drain doping profile; threshold voltage; trigate bulk MOSFET; CMOS technology; Design optimization; Doping profiles; Electrostatics; FETs; Fluctuations; MOSFET circuits; Resource description framework; Silicon; Sun; Threshold voltage; Multigate FET; random-dopant fluctuations (RDFs); variability;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2020321
