DocumentCode :
868482
Title :
Current pulses during breakdown in silicon P-N junctions
Author :
Tan, Daniel Stanley
Volume :
53
Issue :
2
fYear :
1965
Firstpage :
210
Lastpage :
211
Keywords :
Bolometers; Electric breakdown; Electrons; Frequency; Noise level; P-n junctions; Pulse measurements; Silicon; Temperature measurement; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1965.3649
Filename :
1445579
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=868482
