DocumentCode

868482

Title

Current pulses during breakdown in silicon P-N junctions

Author

Tan, Daniel Stanley

Volume

53

Issue

2

fYear

1965

Firstpage

210

Lastpage

211

Keywords

Bolometers; Electric breakdown; Electrons; Frequency; Noise level; P-n junctions; Pulse measurements; Silicon; Temperature measurement; Voltage;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/PROC.1965.3649

Filename

1445579