DocumentCode :
868486
Title :
Microplasma breakdown in high-voltage p--n junctions
Author :
Maddex, K.A. ; Young, M.R.P.
Author_Institution :
Texas Instruments Ltd., Bedford, UK
Volume :
2
Issue :
4
fYear :
1966
fDate :
4/1/1966 12:00:00 AM
Firstpage :
129
Lastpage :
130
Abstract :
The voltage-breakdown characteristics of controlled-avalanche junctions demonstrate the presence of microplasmas whose bistable current-switching properties are described. Microplasmas are exhibited by both diffused and alloyed junctions. The relationship between the breakdown voltage of the first microplasma with temperature for 1500--1800 V junctions is similar to that reported for 7--128 V junctions.
Keywords :
electric breakdown; p-n junctions; plasma; semiconductor junctions; switching;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19660102
Filename :
4206350
Link To Document :
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