Title :
Room temperature GaAs-based quantum cascade laser with GaInP waveguide cladding
Author :
Green, R.P. ; Wilson, L.R. ; Carder, D.A. ; Cockburn, J.W. ; Hopkinson, M. ; Steer, M.J. ; Airey, R.J. ; Hill, G.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Sheffield, UK
fDate :
11/21/2002 12:00:00 AM
Abstract :
A GaAs-based quantum cascade laser utilising lattice matched Ga0.51In0.49P waveguide cladding is reported, Room temperature operation at a wavelength λ ≃ 9.8 μm has been demonstrated, with threshold current densities ∼6 kAcm-2 at 12 K rising to ∼37 kAcm-2 at room temperature. A characteristic temperature T0 ∼ 105 K was obtained between 210 and 305 K. It is predicted that optimised GaInP waveguides can offer significantly lower loss than those based on either GaAs or AlGaAs.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; optical losses; quantum cascade lasers; waveguide lasers; 12 to 305 K; 9.8 micron; Al0.45Ga0.55As barrier; Ga0.51In0.49P; GaAs-Al0.45Ga0.55As; characteristic temperature; lattice matched GaInP waveguide cladding; optimised GaInP waveguides; room temperature GaAs-based quantum cascade laser; room temperature operation; threshold current densities; waveguide loss;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20021080
