DocumentCode
868660
Title
Comparison of three simple field-effect-transistor models
Author
Lamming, J.S.
Author_Institution
Associated Semiconductor Manufacturers Ltd., Wembley Laboratories, Hirst Research Centre, Wembley, UK
Volume
2
Issue
4
fYear
1966
fDate
4/1/1966 12:00:00 AM
Firstpage
147
Lastpage
148
Abstract
The electrical characteristics of junction-gate field-effect transistors with a uniform, linear and parabolic distribution of impurities in the channel region are compared. The uniform distribution corresponds to an alloyed p-n junction gate, while the other two are approximations to a diffused-junction gate.
Keywords
semiconductor junctions; transistors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19660119
Filename
4206495
Link To Document