Title :
Electrical characteristics of ultrathin Pt/Y2O3/Si capacitor with rapid post-metallisation annealing
Author :
Lay, T.S. ; Liu, W.D. ; Kwo, J. ; Hong, M. ; Mannaerts, J.P.
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
fDate :
11/21/2002 12:00:00 AM
Abstract :
After rapid post-metallisation annealing (PMA) in forming gas at 425°C for 30 s, the Pt/Y2O3/Si capacitor shows a sharp capacitance-voltage swing and an increase of accumulation capacitance, and a decrease of the leakage current compared to the sample without PMA. A low oxide charge density of ∼7.7 × 1010 cm-2, and a minimum interface state density of ∼3.6 × 1010 cm-2 eV-1 were obtained at the Y2O3/Si interface with PMA.
Keywords :
MOS capacitors; capacitance; dielectric thin films; interface states; leakage currents; platinum; rapid thermal annealing; silicon; yttrium compounds; 30 s; 425 C; Pt-Y2O3-Si; accumulation capacitance; capacitance-voltage swing; electrical characteristics; forming gas annealing; gate dielectric; leakage current; low oxide charge density; minimum interface state density; rapid post-metallisation annealing; ultrathin Pt/Y2O3/Si capacitor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20021058
