Title :
Semi-insulating layers in 4H and 6H SiC by Si and C ion implantation
Author :
White, J.C. ; Harris, G.L. ; Poker, D.B.
Author_Institution :
Dept. of Electr. Eng., Howard Univ., Washington, DC, USA
fDate :
11/21/2002 12:00:00 AM
Abstract :
Semi-insulating regions have been obtained in 6H and 4H silicon carbide using ion implantation. The silicon carbide samples were implanted with either carbon or silicon ions followed by isochronal heat treatments. This leads to compensation, which is achieved by the lattice damage and by the thermal redistribution of atoms.
Keywords :
annealing; electrical resistivity; ion beam effects; ion implantation; silicon compounds; wide band gap semiconductors; 0.4 to 3.0 MeV; 0.5 to 4.5 MeV; 4H SiC; 600 to 1200 C; 6H SiC; C ion implantation; Si ion implantation; SiC; annealing temperature; compensation; isochronal heat treatments; lattice damage; semi-insulating layers; temperature dependent resistivity measurements; thermal atom redistribution;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20021045
