DocumentCode :
869009
Title :
Radiation experiment provides new information concerning defects on silicon surfaces
Author :
Bostian, C.W. ; Manning, E.G.
Volume :
53
Issue :
3
fYear :
1965
fDate :
3/1/1965 12:00:00 AM
Firstpage :
305
Lastpage :
306
Keywords :
Active noise reduction; Bonding; Degradation; Electrons; Germanium; Lattices; Noise level; Semiconductor device noise; Silicon; Surface structures;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1965.3699
Filename :
1445629
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=869009
