Title :
Nonuniform motion of high-field domains in the Gunn effect
Author_Institution :
Services Electronics Research Laboratory, Harlow, UK
fDate :
6/1/1966 12:00:00 AM
Abstract :
In recent publications, rules have been established for obtaining the properties of the high-field domain traversing in a steady state across Gunn diodes. This letter shows that these steady-state properties cannot be reconciled with the formation stage of the domain without some extension of the theory to include the non-steady-state domain. This letter provides the necessary extension of these rules and concludes with a qualitative account of the domain dynamics from the formation stage up to equilibrium.
Keywords :
Gunn effect; electromagnetic oscillations; semiconductor diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19660163