• DocumentCode
    869167
  • Title

    Study of secondary breakdown in transistors

  • Author

    Novo, D.Domingues ; Corazza, M.

  • Author_Institution
    Université de Toulouse, Laboratoire de Génie Ã\x89lectrique, Toulouse, France
  • Volume
    2
  • Issue
    6
  • fYear
    1966
  • fDate
    6/1/1966 12:00:00 AM
  • Firstpage
    217
  • Lastpage
    218
  • Abstract
    As a first step in the discussion on theories of secondary breakdown, an experimental setup to test transistors is described. Its essential characteristic is the application of constant collector current and power, with the possibility of applying any desired collector-current waveform. A safety circuit protects transistors from destruction during the tests and enables many tests with the same sample.
  • Keywords
    electric breakdown; transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19660184
  • Filename
    4206856
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=869167