Title :
Correct determination of lifetime for minority carriers in high-resistivity silicon--minimal thickness needed
Author :
Chaput, P. ; Blanc, D. ; Casanovas, E. ; Peyre-Lavigne, A. ; Chapuis, Anne-Marie ; Soudain, G.
Author_Institution :
Faculté des Sciences de l´´Université de Toulouse, Centre de Physique Nucléaire, Toulouse, France
fDate :
6/1/1966 12:00:00 AM
Abstract :
The minimal sample thickness needed to obtain a correct value of the lifetime of minority carriers is given. This thickness is 2.5 times the diffusion length for 500 Ωcm silicon and 1.5 times the diffusion length for 10000 Ωcm silicon.
Keywords :
semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19660189
