Title :
Improvement in efficiency of a Gunn-effect oscillator with change of geometry
Author_Institution :
Services Electronics Research Laboratory, Harlow, UK
fDate :
7/1/1966 12:00:00 AM
Abstract :
It is likely that the excess material surrounding the tin contact in conventional Gunn diodes could adversely affect the efficiency. This material was removed from two samples in stages, altering the aspect ratio of the Gunn layer eventually by a factor of about 3. It was found that in both cases marked increases in efficiency were produced.
Keywords :
Gunn effect; oscillators; semiconductor diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19660200
