• DocumentCode
    8694
  • Title

    III-V Heterostructure Nanowire Tunnel FETs

  • Author

    Lind, Erik ; Memisevic, Elvedin ; Dey, Anil W. ; Wernersson, Lars-Erik

  • Author_Institution
    Dept. of Electr. & Inf. Technol., Lund Univ., Lund, Sweden
  • Volume
    3
  • Issue
    3
  • fYear
    2015
  • fDate
    May-15
  • Firstpage
    96
  • Lastpage
    102
  • Abstract
    In this paper, InAs/GaSb nanowire tunnel field-effect transistors (TFETs) are studied theoretically and experimentally. A 2-band 1-D analytic tunneling model is used to calculate the on- and off-current levels of nanowire TFETs with staggered source/channel band alignment. Experimental results from lateral InAs/GaSb are shown, as well as first results on integration of vertical InAs/GaSb nanowire TFETs on Si substrates.
  • Keywords
    III-V semiconductors; field effect transistors; gallium compounds; indium compounds; nanowires; semiconductor device models; tunnel transistors; 2-band 1-D analytic tunneling model; III-V heterostructure nanowire tunnel FET; InAs-GaSb; field-effect transistors; staggered source-channel band alignment; Logic gates; Nanoscale devices; Photonic band gap; Silicon; Substrates; Temperature measurement; Tunneling; GaSb; III-V; InAs; Tunnel field effect transistors (TFET); broken gap;
  • fLanguage
    English
  • Journal_Title
    Electron Devices Society, IEEE Journal of the
  • Publisher
    ieee
  • ISSN
    2168-6734
  • Type

    jour

  • DOI
    10.1109/JEDS.2015.2388811
  • Filename
    7004776
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=8694