GaN Heterostructure Barrier Diodes Exploiting Polarization-Induced $\\delta$ -Doping

Author

Pei Zhao ; Verma, A. ; Verma, Jai ; Xing, Huili Grace ; Fay, Patrick ; Jena, D.

Author_Institution

Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA

Volume

35

Issue

6

fYear

2014

fDate

Jun-14

Firstpage

615

Lastpage

617

Abstract

A GaN-based heterostructure barrier diode (HBD) similar to GaAs planar-doped barrier diodes is demonstrated. Instead of doping with impurities, the polarization-induced sheet charge at the III-nitride heterojunction behaves as an effective δ -doping. An AlGaN/GaN heterostructure is used for the demonstration. The rectifying characteristics of the polarization-induced GaN HBDs can be tuned by controlling the graded AlGaN thickness and composition. Such polarization-engineered HBDs can find applications in high-voltage and high-frequency electronics.

Keywords

III-V semiconductors; gallium arsenide; semiconductor diodes; semiconductor doping; semiconductor heterojunctions; AlGaN-GaN; GaAs; III-nitride heterojunction; heterostructure barrier diodes; high-frequency electronics; high-voltage electronics; impurities; planar-doped barrier diodes; polarization-engineered HBDs; polarization-induced δ-doping; polarization-induced sheet charge; Aluminum gallium nitride; Capacitance; Detectors; Doping; Gallium arsenide; Gallium nitride; Schottky diodes; Aluminum nitride; MBE; MBE.; gallium nitride; heterostructure; planar doped barrier; polarization doping;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2316140

Filename

6802442

GaN Heterostructure Barrier Diodes Exploiting Polarization-Induced -Doping

Pei Zhao ; Verma, A. ; Verma, Jai ; Xing, Huili Grace ; Fay, Patrick ; Jena, D.

jour

GaN Heterostructure Barrier Diodes Exploiting Polarization-Induced $\\delta$ -Doping