DocumentCode :
86967
Title :
GaN Heterostructure Barrier Diodes Exploiting Polarization-Induced 
-Doping
Author :
Pei Zhao ; Verma, A. ; Verma, Jai ; Xing, Huili Grace ; Fay, Patrick ; Jena, D.
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
Volume :
35
Issue :
6
fYear :
2014
fDate :
Jun-14
Firstpage :
615
Lastpage :
617
Abstract :
A GaN-based heterostructure barrier diode (HBD) similar to GaAs planar-doped barrier diodes is demonstrated. Instead of doping with impurities, the polarization-induced sheet charge at the III-nitride heterojunction behaves as an effective δ -doping. An AlGaN/GaN heterostructure is used for the demonstration. The rectifying characteristics of the polarization-induced GaN HBDs can be tuned by controlling the graded AlGaN thickness and composition. Such polarization-engineered HBDs can find applications in high-voltage and high-frequency electronics.
Keywords :
III-V semiconductors; gallium arsenide; semiconductor diodes; semiconductor doping; semiconductor heterojunctions; AlGaN-GaN; GaAs; III-nitride heterojunction; heterostructure barrier diodes; high-frequency electronics; high-voltage electronics; impurities; planar-doped barrier diodes; polarization-engineered HBDs; polarization-induced δ-doping; polarization-induced sheet charge; Aluminum gallium nitride; Capacitance; Detectors; Doping; Gallium arsenide; Gallium nitride; Schottky diodes; Aluminum nitride; MBE; MBE.; gallium nitride; heterostructure; planar doped barrier; polarization doping;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2014.2316140
Filename :
6802442
Link To Document :
