Title :
Millimetre-wave planar oscillator on semi-insulating GaAs substrate
Author :
Freyer, J. ; Guttich, U. ; Wenger, J. ; Zhang, X.
Author_Institution :
Tech. Univ., Munchen, West Germany
fDate :
4/1/1989 12:00:00 AM
Abstract :
Design and fabrication of V-band stripline oscillators for pulsed and CW IMPATT diodes on semi-insulating GaAs substrates are described. Maximum output power of 125 mW at 53 GHz and 80 mW at 70 GHz, with an efficiency up to 3%, could be realised for Si and GaAs CW devices, respectively.
Keywords :
III-V semiconductors; IMPATT diodes; elemental semiconductors; gallium arsenide; microwave oscillators; silicon; solid-state microwave circuits; strip line components; 125 MW; 3 percent; 53 GHz; 70 GHz; 80 MW; CW; GaAs; GaAs substrate; IMPATT diodes; Si; V-band stripline oscillators; efficiency; output power; pulsed;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
