Title :
Analysis of Bias Effects on the Total-Dose Response of a Bipolar Voltage Comparator
Author :
Bernard, M.F. ; Dusseau, L. ; Boch, J. ; Vaille, J.-R. ; Saigne, F. ; Schrimpf, R.D. ; Lorfevre, E. ; David, J.P.
Author_Institution :
Univ. Montpellier II
Abstract :
The impact of the bias condition during irradiation on the total-dose response of a bipolar voltage comparator is investigated. Experimental results obtained with input pins biased asymmetrically during irradiation exhibit completely different total-dose response compared to irradiation with all pins grounded. Circuit analysis shows that asymmetrical biasing of the input stage creates a mismatch of the gain degradation in the transistors constituting the differential pair
Keywords :
bipolar analogue integrated circuits; comparators (circuits); network analysis; radiation effects; IC; asymmetrical biasing; bias effects; bipolar analog circuits; bipolar voltage comparator; circuit analysis; differential pair; gain degradation; input pins; input stage; integrated circuits; linear voltage comparator; total-dose response; transistors; Analog circuits; Analog integrated circuits; Bipolar transistors; Circuit analysis; Degradation; Ionizing radiation; Manufacturing; Mirrors; Pins; Voltage; Bipolar analog circuits; circuitry; integrated circuits (ICs); linear voltage comparator; total dose;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.885002
