Title :
Physical Model for the Low-Dose-Rate Effect in Bipolar Devices
Author :
Boch, J. ; Saigne, F. ; Schrimpf, R.D. ; Vaille, J.-R. ; Dusseau, L. ; Lorfevre, E.
Author_Institution :
CEM2, Univ. de Montpellier II
Abstract :
A physical model of the dose-rate effect in bipolar junction transistors is proposed, based on competition between trapping and recombination of radiation-induced carriers in the oxide. The initial recombination of the carriers is considered in this model, taking into account the temperature effect. The general trends obtained with this model are in very good agreement with experimental data. It is also shown that the dose rate effect depends significantly on oxide quality
Keywords :
bipolar transistors; electron traps; electron-hole recombination; hole traps; semiconductor device models; bipolar junction transistors; low-dose-rate effect; oxide; physical model; radiation-induced carrier recombination; radiation-induced carrier trapping; temperature effect; Degradation; Electron optics; Electron traps; Equations; Luminescence; Optical sensors; Space charge; Space technology; Spontaneous emission; Temperature sensors; Bipolar junction transistor; elevated temperature irradiation; enhanced low-dose-rate sensitivity (ELDRS); initial recombination; switching experiment; total dose;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.886008
