• DocumentCode
    870034
  • Title

    Potential distribution and field dependence of electron velocity in bulk GaAs measured with a point-contact probe

  • Author

    Thim, H.W.

  • Author_Institution
    Bell Telephone Laboratories, Murray Hill, USA
  • Volume
    2
  • Issue
    11
  • fYear
    1966
  • fDate
    11/1/1966 12:00:00 AM
  • Firstpage
    403
  • Lastpage
    405
  • Abstract
    The voltage distribution in GaAs has been measured by probing the potential along the surface of a lightly doped bulk-GaAs wafer. Using this distribution, the field dependence of the electron velocity was calculated. The mobility was found to be negative for electric fields between 3900 V/cm and approximately 7000 V/cm.
  • Keywords
    III-V semiconductors; amplifiers; electric fields; gallium arsenide; instrumentation; semiconductors; voltage distribution;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19660338
  • Filename
    4207003
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=870034