Title :
Potential distribution and field dependence of electron velocity in bulk GaAs measured with a point-contact probe
Author_Institution :
Bell Telephone Laboratories, Murray Hill, USA
fDate :
11/1/1966 12:00:00 AM
Abstract :
The voltage distribution in GaAs has been measured by probing the potential along the surface of a lightly doped bulk-GaAs wafer. Using this distribution, the field dependence of the electron velocity was calculated. The mobility was found to be negative for electric fields between 3900 V/cm and approximately 7000 V/cm.
Keywords :
III-V semiconductors; amplifiers; electric fields; gallium arsenide; instrumentation; semiconductors; voltage distribution;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19660338
