Title :
Analysis of 45-nm Multi-Gate Transistors Behavior Under Heavy Ion Irradiation by 3-D Device Simulation
Author :
Castellani-Coulie, K. ; Munteanu, D. ; Autran, J.L. ; Ferlet-Cavrois, V. ; Paillet, P. ; Baggio, J.
Author_Institution :
Univ. de Provence, Marseille
Abstract :
The sensitivity to heavy ions of three 45-nm multi-gate transistors is evaluated by 3-D simulation. An in depth investigation of main internal parameters is performed to study the electrical response of the different device architectures under irradiation. The obtained results are in agreement with the electrical behavior trends of these devices
Keywords :
MOSFET; ion beam effects; radiation hardening (electronics); semiconductor device models; 3D device simulation; FinFET transistor; GAA transistor; MOSFET; bipolar gain; double-gate transistor; electrical response; heavy ion irradiation; internal parameters; multigate transistors; radiation hardening; Analytical models; Electrodes; Electrostatics; FinFETs; Geometry; Impact ionization; MOSFET circuits; Radiation hardening; Semiconductor films; Silicon; Bipolar gain; FinFET transistor; GAA transistor; MOSFET; double-gate transistor;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.886205
