Secondary Effects of Single Ions on Floating Gate Memory Cells

Author

Cellere, G. ; Paccagnella, A. ; Visconti, A. ; Bonanomi, M.

Author_Institution

Dept. of Inf. Eng, Padova Univ.

Volume

53

Issue

6

fYear

2006

Firstpage

3291

Lastpage

3297

Abstract

A programmed Floating Gate (FG) hit by a heavy ion experiences a large charge loss, which degrades the stored information. However, as a result of irradiation, even FGs not directly hit by ions can experience a shift in the programmed threshold voltage. These latter FGs can be found only in novel technologies with very small floating gates. Further, they have particular characteristics when compared to the cells directly hit by an ion: are characterized by a tendency to cluster, feature a peculiar threshold voltage distribution after irradiation, and do not experience radiation induced leakage current. These FGs are probably generated by ions crossing the device "close enough" to the floating gate, without directly hitting it

Keywords

DRAM chips; SRAM chips; ion beam effects; leakage currents; radiation hardening (electronics); DRAM; SRAM; charge loss; floating gate memory cells; heavy ion irradiation; multiple bit upset; programmed floating gate; radiation induced leakage current; secondary effects; single event effects; single ions; Degradation; Flash memory; Leakage current; MOSFET circuits; Microelectronics; Microprocessors; Nonvolatile memory; Random access memory; Single event upset; Threshold voltage; Floating gate (FG) memories; multiple bit upset; radiation induced leakage current; single event effects;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2006.883996

Filename

4033300