Title :
Radiation Hardened by Design RF Circuits Implemented in 0.13 μm CMOS Technology
Author :
Chen, W. ; Pouget, V. ; Gentry, G.K. ; Barnaby, H.J. ; Vermeire, B. ; Bakkaloglu, B. ; Kiaei, S. ; Holbert, K.E. ; Fouillat, P.
Author_Institution :
Arizona State Univ., Tempe, AZ
Abstract :
Two important RF building blocks, a low noise amplifier and a voltage-controlled oscillator, were designed and fabricated in a 0.13 mum CMOS process using radiation-hardened by design techniques. Both circuits exhibit only minimal degradation with total dose when the parts are irradiated up to 500 krad (SiO2). Laser beam testing results indicate that the output spectrum of the two circuits has no noticeable change with laser energy up to 200 pJ
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit design; laser beam applications; low noise amplifiers; radiation hardening (electronics); radiofrequency amplifiers; radiofrequency oscillators; voltage-controlled oscillators; 0.13 micron; CMOS technology; MOSFET; RF building blocks; RF circuits; RHBD; annular gate transistor; circuit output spectrum; laser beam testing; laser energy; low noise amplifier; minimal degradation; radiation hardened by design; single-event transients; total ionizing dose; voltage-controlled oscillator; CMOS process; CMOS technology; Circuit noise; Circuit testing; Laser transitions; Low-noise amplifiers; Radiation hardening; Radio frequency; Radiofrequency amplifiers; Voltage-controlled oscillators; Annular gate transistor; low noise amplifier (LNA); radiation hardened by design (RHBD); single-event transients; total ionizing dose; voltage-controlled oscillators (VCO);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.885009
