Title :
A Statistical Technique to Measure the Proportion of MBU´s in SEE Testing
Author :
Chugg, A.M. ; Moutrie, M.J. ; Burnell, A.J. ; Jones, R.
Author_Institution :
Radiat. Effects Group, MBDA UK Ltd, Bristol
Abstract :
Neutron SEE data for memories shows that the distribution of MBU´s is a geometrical progression. We demonstrate that this permits the proportion of MBU´s to be calculated from the mean and variance of the errors per read-cycle
Keywords :
DRAM chips; SRAM chips; error statistics; integrated circuit modelling; neutron effects; SDRAM; SRAM; geometrical progression; multiple bit upset; neutron single event effect; single event effect testing; statistical technique; Atmospheric modeling; Charge coupled devices; Error correction; Monitoring; Neutrons; Radiation effects; Random access memory; SDRAM; Testing; Uncertainty; Multiple bit upset (MBU); SDRAM; SRAM; neutrons; single event effect (SEE); statistical technique;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.883907
