Title :
A new I-V model for short gate-length MESFET´s
Author :
Chin, Shan-Ping ; Wu, Ching-Yuan
Author_Institution :
Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fDate :
4/1/1993 12:00:00 AM
Abstract :
An I-V model for short gate-length MESFETs operated in the turn-on region is proposed, in which the two-dimensional potential distributions contributed by the depletion-layer charges under the gate and in the ungated region are separately obtained by conventional 1-D approximation and the Green´s function solution technique. Moreover, the bias-dependent parasitic resistances due to the modulation of the depletion layer in the ungated region for non-self-alignment MESFETs are also taken into account in the developed I-V model. It is shown that good agreement is obtained between the I-V model and the results of 2-D numerical analysis. Moreover, comparisons between the proposed analytical model and the experimental data are made, and excellent agreement is obtained
Keywords :
Green´s function methods; Schottky gate field effect transistors; semiconductor device models; 1-D approximation; 2-D numerical analysis; Green´s function solution technique; I-V model; analytical model; bias-dependent parasitic resistances; charges under gate; depletion layer; depletion-layer charges; experimental data; gated region; short gate-length MESFETs; turn-on region; two-dimensional potential distributions; ungated region; Analytical models; Dielectrics; Doping profiles; Electric resistance; Electron mobility; Integrated circuit modeling; MESFETs; Numerical analysis; Permittivity; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
