A new I-V model for short gate-length MESFET´s

Author

Chin, Shan-Ping ; Wu, Ching-Yuan

Author_Institution

Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

Volume

40

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

712

Lastpage

720

Abstract

An I-V model for short gate-length MESFETs operated in the turn-on region is proposed, in which the two-dimensional potential distributions contributed by the depletion-layer charges under the gate and in the ungated region are separately obtained by conventional 1-D approximation and the Green´s function solution technique. Moreover, the bias-dependent parasitic resistances due to the modulation of the depletion layer in the ungated region for non-self-alignment MESFETs are also taken into account in the developed I-V model. It is shown that good agreement is obtained between the I-V model and the results of 2-D numerical analysis. Moreover, comparisons between the proposed analytical model and the experimental data are made, and excellent agreement is obtained

Keywords

Green´s function methods; Schottky gate field effect transistors; semiconductor device models; 1-D approximation; 2-D numerical analysis; Green´s function solution technique; I-V model; analytical model; bias-dependent parasitic resistances; charges under gate; depletion layer; depletion-layer charges; experimental data; gated region; short gate-length MESFETs; turn-on region; two-dimensional potential distributions; ungated region; Analytical models; Dielectrics; Doping profiles; Electric resistance; Electron mobility; Integrated circuit modeling; MESFETs; Numerical analysis; Permittivity; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.202782

Filename

202782