Title :
An a-Si:H/a-Si,Ge:H bulk barrier phototransistor with a-SiC:H barrier enhancement layer for high-gain IR optical detector
Author :
Hwang, Sheng-Beng ; Fang, Y.K. ; Chen, Kuin-Hui ; Liu, Ching-Ru ; Hwang, Jun-Dar ; Chou, Min-Hong
Author_Institution :
VLSI Technol. Lab., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
4/1/1993 12:00:00 AM
Abstract :
The design and fabrication of a high-gain amorphous silicon/amorphous silicon germanium (a-Si:H/a-Si,Ge:H) bulk barrier phototransistor for infrared light detection applications are reported. The a-Si,Ge:H material featured a lower energy gap and is suitable for the absorption of longer wave light, but it also leads to a low breakdown voltage and high dark current. An additional a-SiC:H thin-film layer was used at the collector/base interface in the conventional amorphous bulk barrier phototransistor to enhance the function of the bulk barrier and obtain high optical gain
Keywords :
Ge-Si alloys; amorphous semiconductors; elemental semiconductors; energy gap; infrared detectors; photodetectors; phototransistors; silicon; silicon compounds; IR optical detector; Si-Ge:H alloys; absorption of longer wave light; amorphous Si:H-SiC:H-SiGe:H; barrier enhancement layer; breakdown voltage; bulk barrier phototransistor; dark current; energy gap; fabrication; infrared light detection; low bandgap; semiconductors; Amorphous materials; Amorphous silicon; Dark current; Glass; Infrared detectors; Leakage current; Optical detectors; Optical materials; Phototransistors; Stimulated emission;
Journal_Title :
Electron Devices, IEEE Transactions on
