Evidence of different conduction mechanisms in accumulation-mode p-channel SOI MOSFET´s at room and liquid-helium temperatures

Author

Rotondaro, Antonio Luis Pacheco ; Magnusson, Ulf K. ; Claeys, Cor ; Flandre, Denis ; Terao, Akira ; Colinge, Jean-Pierre

Author_Institution

IMEC, Leuven, Belgium

Volume

40

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

727

Lastpage

732

Abstract

The threshold voltage for the three different conduction components of an accumulation-mode PMOS SOI were experimentally extracted at room and liquid-helium temperatures. A deep-depletion transient effect was observed to play an important role when one of the interfaces was in inversion, even at room temperature. An intuitive physical interpretation is given for the suppression of some current components at liquid-helium temperatures. In addition, a simple model for calculating the silicon-film thickness and the doping level is presented

Keywords

insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; thin film transistors; 4.2 K; SOI MOSFETs; Si film thickness; accumulation-mode PMOSFETs; conduction components; conduction mechanisms; current components suppression; deep-depletion transient effect; doping level; liquid He temperature; model; physical interpretation; room temperature; threshold voltage; Analytical models; Current measurement; Data mining; Doping; Helium; MOSFET circuits; Senior members; Temperature; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.202784

Filename

202784