• DocumentCode
    870288
  • Title

    Light Particle-Induced Single Event Degradation in SDRAMs

  • Author

    David, J.-P. ; Bezerra, F. ; Lorfevre, E. ; Nuns, T. ; Inguimbert, C.

  • Author_Institution
    ONERA
  • Volume
    53
  • Issue
    6
  • fYear
    2006
  • Firstpage
    3544
  • Lastpage
    3549
  • Abstract
    SDRAMs have been exposed to protons, neutrons, alpha particles, heavy ions and Co60 irradiations. Numerous cells exhibit large data retention time degradation that are attributed to single interactions. The physical process leading to the degradation is discussed. The annealing behavior and leakage current order of magnitude are compatible with the properties, stability and emission rate of clusters of defects in the silicon
  • Keywords
    DRAM chips; SRAM chips; alpha-particle effects; annealing; leakage currents; neutron effects; proton effects; silicon; Co60 irradiations exposure; SDRAM; alpha particles exposure; annealing behavior; defects clusters; heavy ions exposure; leakage current; light particle-induced single event degradation; neutrons exposure; physical process; protons exposure; silicon; Annealing; Argon; Leakage current; Neutrons; Pins; Protons; SDRAM; Stability; Temperature; Thermal degradation; Degradation; SDRAM; SEE; nucleons;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2006.886210
  • Filename
    4033393
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=870288