Title :
Light Particle-Induced Single Event Degradation in SDRAMs
Author :
David, J.-P. ; Bezerra, F. ; Lorfevre, E. ; Nuns, T. ; Inguimbert, C.
Author_Institution :
ONERA
Abstract :
SDRAMs have been exposed to protons, neutrons, alpha particles, heavy ions and Co60 irradiations. Numerous cells exhibit large data retention time degradation that are attributed to single interactions. The physical process leading to the degradation is discussed. The annealing behavior and leakage current order of magnitude are compatible with the properties, stability and emission rate of clusters of defects in the silicon
Keywords :
DRAM chips; SRAM chips; alpha-particle effects; annealing; leakage currents; neutron effects; proton effects; silicon; Co60 irradiations exposure; SDRAM; alpha particles exposure; annealing behavior; defects clusters; heavy ions exposure; leakage current; light particle-induced single event degradation; neutrons exposure; physical process; protons exposure; silicon; Annealing; Argon; Leakage current; Neutrons; Pins; Protons; SDRAM; Stability; Temperature; Thermal degradation; Degradation; SDRAM; SEE; nucleons;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.886210
