Title :
Spread-vertical-capacitor cell (SVC) for high-density dRAM´s
Author :
Matsuo, Naoto ; Nakata, Yoshiro ; Ogawa, Hisashi ; Yabu, Toshiki ; Matsumoto, Susumu ; Sagago, M. ; Hashimoto, Kazuhiko ; Okada, Shozo
Author_Institution :
Matsushita Electric Ind. Co. Ltd., Osaka, Japan
fDate :
4/1/1993 12:00:00 AM
Abstract :
An advanced three-dimensionally (3-D) stacked-capacitor cell, the spread-vertical-capacitor cell (SVC), was developed. SVC realized a storage capacitance (Cs) of 30 fF with a cell area of 1.8 μm2, a capacitor height of 0.37 μm, and an equivalent SiO2 film thickness of 7 nm for oxide-nitride-oxide (ONO). By extrapolating these results to 256-Mb DRAMs, a Cs of 24 fF is obtained with a cell area of 0.5 μm2, a capacitor height of 0.4 μm, and an equivalent SiO2 thickness of 5 nm, and these values satisfy the specifications for 256-Mb DRAMs. The low capacitor height of SVC makes possible a fabrication process using ArF excimer laser lithography
Keywords :
DRAM chips; MOS integrated circuits; VLSI; capacitors; 193 nm; 256 Mbit; 30 to 24 fF; 7 to 5 nm; ArF excimer laser lithography; DRAMs; ONO film; VLSI; capacitor height; cell area; equivalent SiO2 film thickness; possible a fabrication process; spread-vertical-capacitor cell; stacked-capacitor cell; storage capacitance; Anisotropic magnetoresistance; Capacitance; Capacitors; Dry etching; Electrodes; Hafnium; Lithography; Optical device fabrication; Random access memory; Static VAr compensators;
Journal_Title :
Electron Devices, IEEE Transactions on
