Title :
Total Dose Radiation Response of Nitrided and Non-nitrided SiO2/4H-SiC MOS Capacitors
Author :
Dixit, Sriram K. ; Dhar, Sarit ; Rozen, John ; Wang, Sanwu ; Schrimpf, Ronald D. ; Fleetwood, Daniel M. ; Pantelides, Sokrates T. ; Williams, John R. ; Feldman, Leonard C.
Author_Institution :
Interdisciplinary Mater. Sci Program, Vanderbilt Univ., Nashville, TN
Abstract :
The total dose radiation response of nitrided and non-nitrided n-type 4H-SiC is reported for metal oxide semiconductor capacitors exposed to 10-keV X-rays under positive bias. The radiation response is affected strongly by differences in the SiC band gap and interface/near interface SiO2 trap density from typical Si MOS devices. Significantly higher net trapped positive charge densities were observed in nitrided n-SiC MOS capacitors compared to the non-nitrided samples. The mechanisms contributing to the differences in the charge trapping in these devices are discussed. Differences in the interfacial layer between SiO2/Si and SiO2/SiC are responsible for the observed dissimilarities in charge trapping behavior
Keywords :
MOS capacitors; X-ray effects; interface phenomena; silicon compounds; wide band gap semiconductors; SiO2-SiC; X-ray radiation; charge trapping; dose radiation damage; interfacial layer; metal oxide semiconductor capacitors; nitrided MOS capacitors; nonnitrided MOS capacitors; Aerospace electronics; Annealing; MOS capacitors; MOS devices; MOSFETs; Photonic band gap; Physics; Silicon carbide; Thermal conductivity; X-rays; Capacitors; X-ray; metal-oxide-semiconductor (MOS); nitrided; radiation damage; silicon carbide (SiC); total dose;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.885164
