Avalanche breakdown and surface deep-level trap effects in GaAs MESFET´s

Author

Li, Chi-Lung ; Barton, Trevor M. ; Miles, Robert E.

Author_Institution

Dept. of Electron. & Electr. Eng., Leeds Univ., UK

Volume

40

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

811

Lastpage

816

Abstract

Time-dependent numerical simulations have been performed to investigate avalanche breakdown and surface deep-level trapping effects in GaAs MESFETs. The model is based on a combination of bipolar drift-diffusion transport, impact ionization, and a dynamic surface charging mechanism. A realistic trapping process is introduced into the surface trap model from which the spatial distribution of surface charge density is determined. The basic breakdown mechanisms, gate-bias-dependent breakdown voltages, and effects of surface charges are demonstrated. It is shown that the surface deep-level traps have a pronounced effect on the breakdown phenomenon

Keywords

III-V semiconductors; Schottky gate field effect transistors; electric breakdown of solids; electron traps; gallium arsenide; hole traps; semiconductor device models; GaAs; MESFETs; avalanche breakdown; bipolar drift-diffusion transport; breakdown mechanisms; breakdown phenomenon; dynamic surface charging mechanism; effects of surface charges; gate-bias-dependent breakdown voltages; impact ionization; semiconductors; surface charge density; surface deep-level trap effects; surface trap model; time dependent numerical simulation; trapping process; Avalanche breakdown; Breakdown voltage; Current density; Electric breakdown; Electron traps; Gallium arsenide; MESFETs; Numerical simulation; Permittivity; Surface charging;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.202795

Filename

202795