DocumentCode :
870452
Title :
Comments on Transient analysis of stored charge in neutral base region [with reply]
Author :
Parker, Julian ; Suzuki, Kenji ; Satoh, S. ; Nakayama, Naoyuki
Author_Institution :
Texas Instrument Inc., Dallas, TX, USA
Volume :
40
Issue :
4
fYear :
1993
fDate :
4/1/1993 12:00:00 AM
Firstpage :
833
Lastpage :
835
Abstract :
The commenter addresses questions raised in the above-titled paper by K. Suzuki et al. (ibid., vol.39, p.1164-9, May 1992) concerning the validity of bipolar transistor models using the partitioned-charge (PC) approach for transient simulations. Suzuki et al. assert that the concept of charge partitioning applies only to discharge transients and thus the charge-partition ratio depends on the sign of the emitter-base voltage gradient, which, if true, would greatly reduce the utility of PC-based models. The commenter shows that this is not the case and that their conclusion is due only to a misinterpretation of the PC model. The authors reply.<>
Keywords :
bipolar transistors; semiconductor device models; transients; bipolar transistor models; charge-partition ratio; comments; partitioned charge based models; reply; stored charge in neutral base region; transient analysis; transient simulations; Charge coupled devices; Dark current; Equations; Fluctuations; Frequency; Physics; Schottky diodes; Semiconductor diodes; Semiconductor process modeling; Transient analysis;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.202801
Filename :
202801
Link To Document :
بازگشت