Title :
Static and dynamic behaviour of transistors in the avalanche region
fDate :
4/1/1971 12:00:00 AM
Abstract :
The behavior has been studied assuming that the transistor is acting as a nonlinear negative resistance dipole, defined from its I-V characteristics. A simple method has been obtained to plot the static characteristic with good accuracy. Then the nonlinear differential equations for a simple switching circuit are graphically solved and the theory is compared with the experimental results.
Keywords :
Transistors; transistors; Capacitance; Circuits; Frequency dependence; Inductance; Nonlinear equations; Output feedback; Silicon; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1971.1049655
