Large-Signal RF Circuit Model for a High-Power Laser Diode Module

An electrical large-signal circuit model for a 30-W high-power laser diode module is presented. Such modules are designed primarily for continuous wave (cw) operation but can be pulsed in the sub- μs temporal range for special applications. Our model is thus valid up to 20 MHz in the electrical frequency domain. The elements of the circuit model have been derived from RF impedance measurements using a calibrated vector network analyzer and a high-current dc/RF bias-T. The impedance is dominated by the inductance of the high-current connecting leads from the laser driver to the laser chip. The skin effect has been found to influence considerably both resistive and inductive impedances at high frequencies. For large-signal circuit simulations in the time domain, the current-voltage characteristic of the diode p-n junction is included by an analytic equation. The model is verified by comparison of simulation results with measured currents, voltages, and laser powers in large-signal pulsed-mode operation. This model is well suited for the design of optimized pulsed-current driver circuits.