New ultra high-speed VUG-SIBH laser structure with 2 ps-RC product

Author

Kazmierski, C. ; Robein, D. ; Mathoorasing, D.

Author_Institution

France Telecom, Bagneux

Volume

10

Issue

12

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

1935

Lastpage

1938

Abstract

A new all-MOVPE low-RC BH laser structure with semi-insulating (SI) InP layers was designed. This structure was designed to avoid a selective epitaxy step. The fabrication process consists of three MOVPE steps. An extremely low capacitance below 0.6 pF and a series resistance around 3 Ω; (RC product <2 ps) of the laser structure was observed. Using this structure a 1.3-μm bulk laser had a nicely smooth optical response with a bandwidth well in excess of 18 GHz (the measurement limit). A fitting procedure, using the laser response transfer function, confirmed a negligible RC product (2 ps), a power limited bandwidth of about 22 GHz, and excellent RF modulation efficiency

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 0.6 pF; 1.3 micron; 18 GHz; 2 ps; 22 GHz; 3 ohm; GaInAsP-InP:Zn,Fe; III-V semiconductor; MOVPE steps; RC product; RF modulation efficiency; V on U groove laser; fitting procedure; laser response transfer function; power limited bandwidth; semiinsulating InP layers; ultra high-speed VUG-SIBH laser structure; Bandwidth; Capacitance; Epitaxial growth; Epitaxial layers; High speed optical techniques; Indium phosphide; Optical design; Optical device fabrication; Optical modulation; Ultraviolet sources;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.202815

Filename

202815