DocumentCode :
870595
Title :
Properties of avalanche breakdown in the GaAs thin-film switch
Author :
Mizushima, Y. ; Igarashi, Yoichiro ; Ochi, O.
Volume :
53
Issue :
5
fYear :
1965
fDate :
5/1/1965 12:00:00 AM
Firstpage :
509
Lastpage :
510
Keywords :
Avalanche breakdown; Breakdown voltage; Crystals; Electric breakdown; Electrons; Gallium arsenide; Ionization; Magnetic field measurement; Switches; Transistors;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1965.3850
Filename :
1445780
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=870595
