Title :
Strained quantum wells for polarization-independent electrooptic waveguide switches
Author :
Zucker, J.E. ; Jones, K.L. ; Chiu, T.H. ; Tell, B. ; Brown-Goebeler, K.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
fDate :
12/1/1992 12:00:00 AM
Abstract :
A polarization-independent quantum well waveguide switch is demonstrated. By altering the composition and hence the degree of built-in strain, the bandgap of In1-xGaxAs/InP quantum wells is engineered to produce equal field-induced refractive-index change in TE and TM polarizations. At the same time, the enhanced electrooptic effects characteristic of unstrained quantum wells are maintained, such that the voltage-length product for switching is only 3 V-mm
Keywords :
III-V semiconductors; electro-optical devices; energy gap; gallium arsenide; indium compounds; integrated optics; optical switches; optical waveguides; refractive index; semiconductor quantum wells; semiconductor switches; III-V semiconductor; In1-xGaxAs/InP quantum wells; InGaAs-InP; TE polarization; TM polarizations; bandgap; built-in strain; composition; field-induced refractive-index change; optical communication; polarization-independent electrooptic waveguide switches; voltage-length product; Communication switching; Electrooptical waveguides; Excitons; Indium phosphide; Optical polarization; Optical refraction; Optical waveguides; Switches; Tellurium; Voltage;
Journal_Title :
Lightwave Technology, Journal of
