Title :
SEUs Induced by Thermal to High-Energy Neutrons in SRAMs
Author :
Granlund, Thomas ; Olsson, Nils
Author_Institution :
AerotechTelub AB, Saab Avionics AB, Linkoping
Abstract :
We report on experimental SEU studies using thermal and high-energy neutrons, conducted at the TRIUMF facility, Vancouver. Different SRAM samples were used and many samples showed to be highly susceptible to thermal neutrons. Moreover, a considerable part of the total SEU-rate, at high altitudes as well as down at sea level, may be attributed to thermal neutrons for RAM based devices
Keywords :
SRAM chips; neutron effects; semiconductor device reliability; semiconductor device testing; RAM based devices; SEU; SRAM; TRIUMF facility; Vancouver; high-energy neutrons; semiconductor device radiation effects; semiconductor device reliability; semiconductor device testing; semiconductor memories; thermal neutrons; Aerospace electronics; Manufacturing; Mesons; Neutrons; Particle beams; Protons; Random access memory; Shape measurement; Single event transient; Testing; Semiconductor device radiation effects; semiconductor device reliability; semiconductor device testing; semiconductor memories;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.880930
