Title :
Microdose Induced Data Loss on Floating Gate Memories
Author :
Guertin, Steven M. ; Nguyen, Duc N. ; Patterson, Jeffrey D.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
Abstract :
Heavy ion irradiation of flash memories shows loss of stored data. The fluence dependence is indicative of microdose effects. Other qualitative factors identifying the effect as microdose are discussed. The data is presented, and compared to statistical results of a microdose target-based model
Keywords :
flash memories; losses; radiation effects; SEU; data loss; flash memories; floating gate memories; heavy ion irradiation; microdose target-based model; statistical results; Circuits; EPROM; Electrons; Flash memory; Mission critical systems; Nonvolatile memory; Propulsion; Space technology; Space vehicles; Threshold voltage; Flash; SEU; floating gate; microdose;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.885861
